دیتاشیت BD136G
مشخصات دیتاشیت
| نام دیتاشیت |
BD136,138,140
|
| حجم فایل |
315.427
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
5
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
onsemi BD136G
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Transistor Type:
PNP
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
1.5A
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Power Dissipation (Pd):
1.25W
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Transition Frequency (fT):
-
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DC Current Gain (hFE@Ic,Vce):
40@150mA,2V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
45V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@500mA,50mA
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Package:
TO-225
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Manufacturer:
onsemi
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Series:
-
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Packaging:
Bulk
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Part Status:
Obsolete
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Current - Collector (Ic) (Max):
1.5A
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Voltage - Collector Emitter Breakdown (Max):
45V
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Vce Saturation (Max) @ Ib, Ic:
500mV @ 50mA, 500mA
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Current - Collector Cutoff (Max):
100nA (ICBO)
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DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 150mA, 2V
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Power - Max:
1.25W
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Frequency - Transition:
-
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Mounting Type:
Through Hole
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Package / Case:
TO-225AA, TO-126-3
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Supplier Device Package:
TO-225AA
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Base Part Number:
BD136
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detail:
Bipolar (BJT) Transistor PNP 45V 1.5A 1.25W Through Hole TO-225AA
